Method of operating a semiconductor memory device

PURPOSE: An operating method of a semiconductor memory device is provided to prevent the reduction of a cell current flowing in a selected memory cell in read-out or verification, thereby increasing the accuracy of read-out or verification. CONSTITUTION: A read command and an address are inputted (S501). When a read operation is initiated, selected odd bit lines are pre-charged first (S503). If the pre-charge operation for the selected odd bit lines is completed, a pre-charge operation for even bit lines, which are unselected bit lines, is performed (S505). The voltage of an odd bit line is sensed, and the data of the odd bit line is latched (S507). The latched data is outputted to the outside (S509). [Reference numerals] (AA) Start; (BB) End; (S501) Input a read command and an address; (S503) Select an odd bit line and pre-charge Unsel WL = Vpass sel WL = Vread SSL = 4.5V; (S505) Select an even bit line and pre-charge Unsel WL = Vpass sel WL = Vread SSL = 0V; (S507) Sense the bit line's voltage and latch data; (S509) Output read data