InP/InGaAs uni-travelling carrier heterojunction phototransistors
2009
A novel heterojunction phototransistor using a uni-travelling carrier photodiode structure in the base and collector layers is proposed and fabricated. A 5 x 5 μm optical detection area device shows an optical gain cutoff frequency of 52 GHz and an optical gain of 37 dB at I GHz.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
6
References
10
Citations
NaN
KQI