Vertical storage devices

A vertical memory device includes a substrate (100), a plurality of channels (122) extending vertically in a first direction substantially perpendicular to an upper surface of the substrate, a plurality of gate lines (145) which (a predetermined number of channels 122) surrounded by the channels (122), a plurality (of the common wirings 175) which are electrically connected (with the gate lines 145) and a plurality of signal wirings (185, 195), which electrically (with the gate lines 145) are connected through the common wiring (175). The gate lines (145) are arranged and spaced from each other along the first direction. Each common wiring (175) is electrically connected to a corresponding one gate line (145) at the same level of the corresponding gate line (145) via a corresponding contact.