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Evaluation of crystal defects by Si trench processing using Raman and photoluminescence spectroscopy
Evaluation of crystal defects by Si trench processing using Raman and photoluminescence spectroscopy
2021
Masato Koharada
Yuta Satake
Jun Yoshigiwa
Koichiro Saga
Hayato Iwamoto
Longxiang Men
Naomi Sawamoto
Ryo Yokogawa
Atsushi Ogura
Keywords:
Materials science
Raman spectroscopy
Crystallographic defect
Photoluminescence
Spectroscopy
Optoelectronics
Trench
Correction
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