Effects of Mn-doping on the electrical and the ferroelectric properties of Bi6Fe2Ti3O18 thin films prepared by using chemical solution deposition

Mn-doped Bi6Fe2Ti3O18 (Bi6Fe2-x Mn x Ti3O18, x = 0.0, 0.5, 1.0 and 1.5, represented as BFMTO00, BFMTO05, BFMTO10 and BFMTO15, respectively) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. Among the thin films, the BFMTO05 thin film exhibited superior electrical and ferroelectric properties. The values of the remnant polarization (2P r ) and the coercive field (2E c ) of the BFMTO05 thin film were 22μC/cm2 and 207 kV/cm at an electric field of 530 kV/cm, respectively. The leakage current density of the BFMTO05 thin film was 5.45 × 10−6 A/cm2 at an electric field of 100 kV/cm. The dielectric constant for the BFMTO05 thin film was 467 at a frequency of 1 kHz. Our work confirms that the enhanced electrical and ferroelectric properties may be related to a decrease in the oxygen vacancy density, a stabilization of the perovskite structure and small changes in the lattice parameter caused by doping of Mn3+ ions into the Fe3+ ion sites.