Magnetophonon and magneto-intersubband-scattering effects in InAs/AlGaSb heterostructures

Abstract Magnetoresistance of a two-dimensional electron gas in InAs/AlGaSb quantum wells with high and low carrier concentrations was measured for a wide range of temperatures. At high temperatures, a weak oscillation of the magnetoresistance with a fundamental field of B 0 ≈6.3 T was observed in the low carrier concentration samples, which is attributed to the magnetophonon resonances, while a combined oscillation of the magnetoresistance due to the magnetophonon and the magneto-intersubband-scattering effects was clearly observed in the high carrier concentration samples.