DIRECT METHOD OF DETERMINING THE SENSITIVITY OF MICROCRYSTALS TO CHARGE PARTICLES

Abstract : As we know from literature which is devoted to founding and developing semiconductor radiation detectors, a charged particle, braked in a solid, expends on the formation of an unbalanced pair of carriers the same amount of energy, regardless of its mass, charge and velocity. Therefore, it is natural to determine the sensitivity of microcrystals of nuclear emulsions to any charged particles as the end-point energy of the election, beginning with which the braking of the electron inside a microcrystal up to stopping will form a center of development in it. Finding this threshold portion of energy is possible, for example, by the photographic efficiency of the action of electrons of different energies on a monolayer preparation of an investigated emulsion. In our experiments irradiation was performed of the sequence of fields on one preparation, where the energy of electrons was increased from 100 to 800 eV, while the density of irradiation remained constant, 0.1 electron microcrystal.