High transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu/sub 3/Ge ohmic contacts

In this paper, we present results of n- and p-MESFETs using one ohmic contact metallurgy, Cu/sub 3/Ge, which was first introduced by Aboelfotoh. Cu/sub 3/Ge makes an ohmic contact to both n- and p-type GaAs at typical doping levels for device applications. The amphipolar nature of this ohmic contact formation will be discussed elsewhere. These contacts exhibit very low contact resistance and do not suffer from lateral spreading during high temperature annealing (500 C). In addition, their uniformity and reproducibility allow reliable fabrication of high-density sub-micron devices. >