Estimating the boron doping level on single wall carbon nanotubes using Raman spectroscopy

Abstract Lowering the Fermi level of a carbon nanotube produces a shift on the Raman spectra of this material. We have developed an easy and fast way to estimate the substitutional doping concentration of boron on single wall carbon nanotubes through Raman spectroscopy and compared the doping level results with other spectroscopy analyses. This technique leads to similar doping level as obtained by the accurate, but time-consuming X-ray photoelectron spectroscopy technique. For this we used a simple equation that relates the shift in the G + band of the Raman spectrum to the charge transfer of the electron acceptor per carbon atom of the structure.