Room temperature bonding and debonding of PI film and glass substrate based on SAB method

In the previews study, we have proposed the room temperature bonding method for polyimide (PI) films and glass wafers that enables debonding even after high temperature process at 400 °C. However, the mechanism that the bond strength was affected by heating was not clear. In this work, we investigated the relationship between the heat treatment and the bond strength of PI films and glass wafers. From the XPS analysis, it was cleared that the fracture path of the PI film shifted to the interface between the PI and the Si intermediate layer from the inner PI film. We indicated the debonding process of the PI and the glass substrates bonded with Si and Fe layers.