Phase separation in SiOx films annealed under enhanced hydrostatic pressure

The effect of enhanced hydrostatic pressure (HP, (10–12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non-stoichiometric SiOx most efficiently at about 450 °C. In spite of enhanced SiOx decomposition, visible photoluminescence appears in HP-treated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 105 Pa). Contrary to that, application of HP results in essential enhancement of near-infrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressure-stimulated crystallization of Si inclusions. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)