Influence of Oxygen Molecules on Electrical Performance of Multilayer WSe 2 TFT

In this study, high-performance multilayer WSe 2 thin-film transistor were demonstrated by rapid thermal annealing process in oxygen ambient. The experimental results indicate that the field-effect mobility of hole could be enhanced 10 3 times larger than that of the device before annealing treatment. The on/off-current ratio will up to so high as 10 7 . The enhancement results from the rearrangement of charge carriers both on the top and at the bottom of the channel due to the adsorbed oxygen molecules. (Keywords: Tungsten diselenide, RTA, TFT)