Multilevel operation in oxide based resistive RAM with SET voltage modulation

In this paper multilevel storage characteristic in Oxide-based Resistive RAM (OxRRAM) is demonstrated by modulating the amplitude of the cell programming voltages. Four resistance levels are clearly obtained. Impact of variability on a multilevel 1T-1R OxRRAM circuit is analyzed quantitatively at a circuit level to guarantee the robustness of the technology.