An experimental soft-error immune 64-Kb 3 ns ECL bipolar RAM

An experimental soft-error immune 64-kb 3-ns emitter couple logic (ECL) random access memory (RAM) has been developed. Its key factors are: a soft-error immune memory cell, an upward transistor decoder, a Darlington word driver with advanced discharge circuits, and 0.8 mu m SICOS technology. To reduce the memory cell size, double-layer polysilicon is used for high and low load-resistor. These double layers of polysilicon are essential in realizing the memory cell size of 498 mu m/sup 2/. >