Nonvolatile Balanced Ternary Memory Based on the Multi-Ferroelectric Material GeSnTe2

Modern computer technology is based on the binary logic system. However, the slowdown of its development calls for transition to multivalued logic (MVL) systems. MVL can yield a denser logic implementation on the same chip area at low cost. More information can be transmitted with the same digits over fewer interconnections, thereby reducing power dissipation. Here, we suggest a novel nonvolatile balanced ternary memory based on the multiferroelectric material GeSnTe2. Two different directions and quantities of electric polarization are found to be stable in atomic-thick two-dimensional structures. The balanced ternary data set of {−1, 0, +1} can be implemented in the two-dimensional material on the nanometer scale. One-shot read/write processes are suggested.