The properties of Schottky junctions on Nb-doped SrTiO3 (001)

Abstract A systematic investigation of surface treatments for metal/Nb-doped SrTiO 3 (NSTO) (001) junctions has been described. Well-controlled metal/NSTO (001) interfaces have been obtained using in-situ deposition of metal electrodes on a NSTO surface soon after the surface treatment using high-purity ozone. As a result, the current-voltage ( i–v ) characteristics of the Au/NSTO and Cu/NSTO Schottky barrier (SB) junctions show high rectification ratios over nine orders of magnitude. The SB heights evaluated from the i–v characteristics are 1.42 eV for Au/NSTO and 1.02 eV for Cu/NSTO.