Single event effect assessment of a 1-Mbit commercial magneto-resistive random access memory (MRAM)

Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm 2 /mg and a saturated cross section of 2.2×10 −4 cm 2 /device. The memory was not sensitive to SEL, SEU or MBUs.