Synthesis of polymetalloxanes and their properties as gate insulator for organic thin film transistors

We report here the synthesis and dielectric properties of polymetalloxane dielectric materials for organic field-effect transistor applications. The gate insulators were obtained from polymetalloxanes by condensation polymerization of metal chelates and silicic acid. The solution shows an appreciable stability to self-condensation and a good coating quality. A high dielectric constant 6.16–8.27 was obtained for the prepared films. Organic thin film transistors with this gate dielectric were found to exhibit high performances, including carrier mobility as large as 1.77 cm2/Vs, on-off current ratios above 1×104, threshold voltages below −0.13 V, and subthreshold swing as low as 0.1 V/decade. In addition, the operating voltage ranges as low as 5 volts was obtained. Open image in new window