High-temperature infrared frequency-modulation dielectric paste and preparation method thereof

The invention belongs to the technical field of electronic materials and particularly relates to high-temperature infrared frequency-modulation dielectric paste and a preparation method thereof. The paste is prepared from the following components in parts by weight: 20-65 parts of inorganic bonding phase, 1-10 parts of infrared frequency-modulation agent and 10-50 parts of organic carrier, wherein the inorganic bonding phase is at least one of SiO2, MgO, B2O3, ZnO, Bi2O3 and a nucleation agent; the infrared frequency-modulation agent is SiC-SiO2-TiO2, NaBa0.85Mg0.15PO4, Co0.6Zn0.4Ni0.8Fe1.2O4, Zn0.4(Re/Mn)0.8Fe1.2O4(Re-La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Dy), Mg2Al4Si5O16, MgO-Al2O3-SiO2 and CoFe2O4; and the organic carrier is a mixture prepared from a solvent, resin, a dispersing agent, a defoaming agent and a thixotropic agent. The infrared frequency-modulation agent has high emissivity within an interval of 8-14 microns, and has a frequency-modulation effect on infrared heat transfer and does not generate harmful radiation in a space; the high-temperature infrared frequency-modulation dielectric paste is good in combinability with a stainless steel substrate and resistance paste, high in adhesive force and good in printability, sintering property and compatibility, and has great market prospect and economic value.