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A Study of TazOs/Rugged Si Capacitor of 23pC/pm2 Applied to High-Density DRAMs using Sub-0.2pm F'rocess
A Study of TazOs/Rugged Si Capacitor of 23pC/pm2 Applied to High-Density DRAMs using Sub-0.2pm F'rocess
1999
Yuzuru Ohji
Sumio Iijima
Akira Saito
Hiroshi Miki
Masahiro Kanai
Michiru Kunitomo
Shotaro Yamamoto
R. Furukawa
Y. Sugawara
Takahiro Uemura
Jon Kuroda
M. Nakata
Teruaki Kisu
Toshiji Kawagoe
Keizou Kawakita
Masami Hasegawa
Masatoshi Nakamura
Kazuhiko Kajigaya
Michio Hidaka
Heiichi Yamamoto
Isamu Asano
Eiji Takeda
Keywords:
Leakage (electronics)
Capacitor
Electrical engineering
Electronic engineering
Materials science
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