Frequency dependence on temperature of AC conductance in silicon detectors

Abstract Measurements of the real and imaginary parts of admittance Y as a function of frequency ω, up to 10 3 kHz at temperatures 10 K ≤ T ≤ 270 K, were performed. The corresponding electric circuit model of Y ( ω ) was calculated. A quadratic dependence of G ( ω ) on ω for 40 K ≤ T ≤ 270 K was obtained. At lower temperatures, T ≤ 40 K, a dependence of G on ω n was obtained, where n n ω = ω c ) depends on T : with decreasing T the value of ω c decreases. For T ≤ 20 K freeze out of free carriers produces a strong reduction of G and independence on ω. It was shown that the resistivity ϱ is a function of T and two types of behaviour appear (phonon scattering and freeze-out phenomena) in the interval 10 K ≤ T ≤ 270 K.