Investigation of 23% monoPoly Screen-Printed Silicon Solar Cells with an Industrial Rear Passivated Contact

We present n-type bifacial solar cells with a rear SiO x /n+:poly-Si passivating contact where the interfacial SiO x and the n+:poly-Si layers are fabricated using an industrial inline plasma-enhanced chemical vapor deposition (PECVD) tool. Using a simple solar cell process flow that can be easily adapted for mass production, we demonstrate a peak cell efficiency of 23.05% with a cell open circuit voltage (V oc ) of 694 mV achieved on large-area, screen printed, Czochralski-silicon (Cz-Si) solar cells using commercial fire-through metal pastes. Furthermore, we show that the n+:poly-Si layers are low-absorbing and can give short-circuit current density (J sc ) values of up to 41.0 mA/cm2 after optimization of the rear poly-Si thickness and the front anti-reflective coating.