Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus

In a previous work, we discovered a new set of growth parameters for fabricating (100) homoepitaxial phosphorus-doped n-type diamond with unique properties: full incorporation of phosphorus donors in substitutional sites together with a low surface roughness. In this work, a planar type Schottky barrier diode has been fabricated on the epilayer and C–V characteristics were measured. From the capacitance properties, the net donor density and the Schottky barrier height were experimentally determined to be ∼3.1 × 1016 cm−3 and ∼4.65 eV, respectively. The phosphorus electrical activity in our (100) n-type diamond epilayer is discussed in comparison with previous works on the (100) and (111) orientations.