Toward chaotic electron transport in bismuth nanocluster wires

We present a generic model for electron transport through nanoscale 2-D devices based on chaotic scattering statistics. Here we focus on wires assembled from bismuth nanoclusters and propose that our scattering model extends to this novel class of devices. The wires are thin enough to confine electrons to a 2-D plane, with widths as narrow as the cluster diameter of 50 nm. We discuss the consequences of our model for both classical and quantum conduction, which includes the prediction of room temperature quantum interference e ects for 50 nm diameter cavities.