Study of novel fully-depleted Ge-on-Insulator n-channel MOSFET with field plate structure for improvement in GIDL and on/off Characteristics

Abstract In this paper, a novel structure of the fully-depleted Ge-on-Insulator (GOI) n-channel MOSFET with field plate is proposed and studied by two-dimensional numerical simulation. The results indicate that the gated-induced drain leakage (GIDL) of the fully-depleted GOI NMOSFET with field plate (FD-FP NMOSFET) is suppressed effectively. Besides, off-state current I off decreases by 2 orders of magnitude compared with the device without field plate. The impacts of the distance of field plate from the drain L cb and the difference of work function between field plate metal and channel material Φ fps on the electrical characteristics of FD-FP NMOSFET are investigated. FD-FP NMOSFET with a Φ fps of 0 eV and a L cb of 5 nm, demonstrates a reduction in I off by more than 3 orders of magnitude as compared with the control device. An on/off ratio I on /I off  = 2.57 × 10 7 , and a sub-threshold swing of 76.8mV/decade are achieved.