Semiconductor laser and method of manufacturing a semiconductor laser as well as wafers

The invention relates to a semiconductor laser, comprising: - a semiconductor layer sequence with two opposite, a resonator defining, facets, and a recess formed between the two facets of the active zone, - a ridge waveguide, which is formed from the semiconductor layer sequence as an overlying the active region bringing an upper surface of the semiconductor layer sequence and is aligned with its longitudinal axis along the active zone, - a contact metallization, the top of the ridge waveguide facing away from one of the active zone is applied, and - a Bestromungsschicht, which is in direct contact with the contact metallization, - wherein the top surface of the semiconductor layer sequence comprising a portion of a longitudinal axis of the ridge waveguide adjacent relation across its width at one of the two facets, wherein the portion comprises a lower portion of the top of the ridge waveguide, with the sub-section relative to the longitudinal axis of the ridge waveguide by a extending the width of the ridge waveguide at said one of both facets adjacent, - wherein the portion is free of the Bestromungsschicht. The invention further relates to a method for producing a semiconductor laser and a wafer.