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Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by Deep Level Transient Spectroscopy
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by Deep Level Transient Spectroscopy
2021
Manuel Fregolent
Matteo Buffolo
Carlo De Santi
Sho Hasegawa
Junta Matsumura
Hiroyuki Nishinaka
Masahiro Yoshimoto
Gaudenzio Meneghesso
Enrico Zanoni
Matteo Meneghini
Keywords:
Materials science
carrier capture
Kinetics
Deep-level transient spectroscopy
Analytical chemistry
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