Contact trenches for better stress transfer transistors in a small distance

The scalability of a stress-inducing mechanism, based on a stressed dielectric cap layer, can be improved by using a single strain-inducing layer is formed in conjunction with contact trenches which shield a major part of a non-desired distortion component in the complementary transistor, the well for a strain component in transistor width direction, is ensured when the contact material with a desired internal stress level is provided.