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Influence of AlGaN/GaN/SiC Parameters of HEMPT-Transistors on Microwave Generators Phase Noises
Influence of AlGaN/GaN/SiC Parameters of HEMPT-Transistors on Microwave Generators Phase Noises
2017
V. V. Gruzdov
C «S PE»Pulsar», Moscow, Russia
K. L. Enisherlova
Y.V. Kolkovsky
N.V. Davidov
S. A. Kapilin
Keywords:
Transistor
Electronic engineering
Microwave
Materials science
algan gan
Optoelectronics
Correction
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