InAlN/AlN/GaN heterostructures for high electron mobility transistors

The results of development of InAlN/AlN/GaN heterostructures, grown on sapphire substrates by metal-organic chemical vapour deposition, and high electron mobility transistors (HEMTs) based on them are presented. The dependencies of the InAlN/AlN/GaN heterostructure properties on epitaxial growth conditions were investigated. The optimal indium content and InAlN barrier layer thicknesses of the heterostructures for HEMT s were determined. The possibility to improve the characteristics of HEMTs by in-situ passivation by Si3N4 thin protective layer deposited in the same epitaxial process was demonstrated. The InAlN/AlN/GaN heterostructure grown on sapphire substrate with diameter of 100 mm were obtained with sufficiently uniform distribution of sheet resistance. The HEMTs with saturation current of 1600 mA/mm and transconductance of 230 mS/mm are demonstrated.