Light emitting diode wafer jointing method, chip manufacturing method and wafer jointing structure

The present invention relates to a light emitting diode wafer jointing method, a chip manufacturing method and a wafer jointing structure, wherein the light emitting diode (LED) wafer jointing method comprises the follow steps: forming a first metal film layer on an LED wafer; forming a second metal film layer on a substrate; forming a jointing material layer on the surface of the first metal film layer, wherein the fusion point of the jointing material layer is lower than 110 DEG C; arranging the LED wafer on the substrate; heating the jointing material layer with a pre-hardening temperature for a pre-hardening time to perform pre-hardening reaction and form a first dielectric metal layer and a second dielectric metal layer; and heating the jointing material layer with a diffusion reaction temperature for a diffusion time to perform the diffusion reaction, wherein the fusion point of the first dielectric metal layer and the second dielectric metal layer is higher than 110 DEG C after diffusion reaction.