Different gate insulators for organic field effect transistors

The aim of this paper is to study the electrical properties of field effect transistors structures with two different insulators polymers, i.e, poly4, vinylphenol (PVP) and silicon oxide (SiO 2 ). In these studies, the organic active layer is always the same it is constituted of pentacene. PVP is an organic material with low k deposited by spin coating. Significant differences in terms of mobility and leakage current are observed with the two dielectrics. Mobility is almost 10 times higher with SiO 2 than with PVP. It is the same with the current leakage that are 1000 times smaller with SiO 2 .