GaAs P-HEMT MMICs for K-to-Ka band wireless communications

This paper describes pseudomorphic HEMT-based MMIC for K- to Ka-band applications for use in wireless communications such as LMDS. A developed LNA exhibits a low noise figure of 1.4 dB and an HPA provides a 31.6 dBm output power at 30 GHz and another HPA 24.6 dBm at 40 GHz. Each chip is miniaturized in size by methods including electromagnetic simulation and a lumped element designing approach.