Nanowire structure with exposed, regularly arranged nanowire ends and methods for making such a structure,

Structure parallel to one another, formed from a semiconductor material nanowires with at least one flat side with free-standing, regularly arranged nanowire ends, with at least one macroporous, formed from the same semiconductor material, vertically penetrated by the nanowires stabilizing layer, wherein the free-standing nanowire ends less than 100 microns on the Stabilsierungsschicht survive.