Phoniton in a GaAs-AlAs acoustic phonon cavity with a tunable two-level system

We propose a 'Phoniton' structure using an acoustic phonon cavity with a tunable two-level system (TLS). The TLS is based on a moderately doped, GaAs-AlAs double quantum well (QW). Energy levels of this TLS can be externally tuned by changing the electrical bias across the QWs. The TLS is enclosed in a high-quality factor (Q) phonon cavity formed using GaAs-AlAs distributed Bragg mirrors. In the strong coupling regime, when the stark splitting between the ground states of the QWs exactly matches the cavity phonon energy, the electrons should continuously shuttle between the ground state of the two QWs with the absorption and emission of longitudinal acoustic phonons, leading to the observation of Rabi splitting of the cavity phonon mode.