Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure

Abstract The fabrication of 5 × 5 crossbar array with a line width of 20 μm was demonstrated. The resistive switching characteristics in the bilayer structure of tantalum oxide and manganese oxide were investigated. The Ag/MnO/Ta 2 O 5 /Pt devices showed stable bipolar resistive switching properties with high resistance ratio, low switching voltage, and forming-free behavior. The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism.