Study on mobile hole generation in blend MoO3:CuPc by capacitance-voltage method

Abstract Systematic C-V measurements were carried out on specially designed capacitance-like devices to study the generation of mobile carriers in 1:1 v% MoO 3 :CuPc blend layer. In these devices, it was experimentally found that only mobile holes were generated by the external electrical field. These mobile holes were generated from CuPc molecules and could only transport among them. Based on this hole generation mechanism, all the enhancements of hole transport in CuPc layer reported previously could be explained by the extra mobile holes generated in the blend, increasing conductivity. Meanwhile a model of capacitance with mobile carriers has been proposed, and the relation between the amount of mobile holes generated and the applied bias voltage has been calculated accordingly. Quite reasonable results were obtained.