Low complexity RF-MEMS switch optimized for operation up to 120°C

This paper presents a RF-MEMS switch optimized for high temperature range of operation using a temperature stable metallization. The devices are fabricated on a silicon substrate in very low complexity process using only one metallization. The performed measurements characterize the properties of the metallization and also the properties of the entire switch in terms of creeping behaviour, RF performance and charging effects at different temperatures. A stable operation up to 120degC is demonstrated and the principle reliability of the switches is shown by 10 9 switching cycles.