Insights into interlayer tunnel FET performance improvement: Lessons learned from graphene hexagonal boron nitride heterostructures

Recent advances in the fabrication of two dimensional heterostructures have facilitated the study of resonant tunneling based interlayer tunnel FETs (ITFETs) which offer the possibility of sharp negative differential resistance (NDR) characteristics [1-3]. More recently, a new technique whereby rotational alignment of the two conduction layers can be guaranteed has been developed [4]. Using a similar technique, we have exhaustively explored various combinations of graphene conduction layers with differing layer thickness. Due to the varying band structures with graphene layer thickness, we observe interesting points that could serve as a basis for obtaining ITFETs with improved performance; i.e. higher peak-to-valley current ratio (PVCR) of the NDR.