A semiconducting AlN coating for microstrip gas chambers

Abstract AlN, a new semiconducting coating for microstrip gas chambers (MSGC) has been studied: The AlN surface resistivity is about 2 × 10 15 Ω/□ at a film thickness between 0.2 and 0.4μm. The rate capability of an MSGC with AlN undercoating is 10 5 –10 6 mm −2 s −1 depending on the surface resistivity value. The compatability of AlN undercoating with a particular lithographic technique for MSGCs with gold strips is investigated.