Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces

Abstract Raman spectroscopy powered by theoretical modeling of vibrational modes was shown to be an effective tool to examine interface structure of superlattices (SLs). In this work we studied GaAs n /AlAs m ( n =1–10 monolayers) corrugated superlattices (CSLs) grown on (311)A GaAs substrates using Raman spectroscopy and high-resolution transmission electron microscopy. The strongest modification of the calculated Raman spectra is found for the finite length of the GaAs-domain in the CSL in the case of partial (