Recent Progress of Pixel Detector R&D based on SOI Technology

Abstract We are developing truly monolithic pixel detectors with a 0.2 μm silicon-on-insulator (SOI) CMOS technology, which is intended to be utilized in various research fields, such as high-energy physics, X-ray material analysis, astrophysics and medical sciences. In the development project, KEK has organized several Multi Project Wafer (MPW) runs and the process has been incrementally improved. Czochralski (CZ-) and Float-Zone (FZ-) silicon has been used as a starting material for the detector fabrication. Using FZ-SOI wafers, the detectors worked at full depletion below the breakdown voltage. The up-to-date integration-type pixel detector with 14 μm pixel size has excellent spatial resolution.