Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite

Multiferroic Y-doped BiFeO3 (BY10FO) thin films were deposited on FTO substrate by using solgel spin coating technique. Y-doping causes structural distortion without changing the structure of BiFeO3 (rhombohedral: R3c). M-H curve reveals Y-doping saturate the magnetization at the lowcoercive field by suppressing the spiral spin modulated structure. The bipolar resistive switching behavior investigated on Ag/BY10FO/FTO heterostructure through local I-V curve. The stability of the device was tested for 30 complete testing cycles with ROn=ROf f ratio around 12. The conduction mechanism of LRS and HRS state explained with space charge limited current and Schottky barrier emission conduction mechanism. The impedance spectroscopy analysis at HRS and LRS ensure significant degradation of resistance from MW to kW. The switching mechanism in heterostructure due to migration and recombination of oxygen vacancies present in the film. The non-degradation of Ag/BY10FO/FTO device after several testing cycles ensure the switching of resistance between On and Off state is reproducible, reversible and controllable, which can be useful for the possible future non-volatile resistive random access memory application.