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Faster radiation detector

1996 
Detector for high-energy radiation - with a semiconductor body (1) made of CdTe or GaAs, - with the first (2) and second electrode (4) on opposite first and second major surfaces of the semiconductor body, for applying an operating voltage, - with a diode structure between the first (2) and second electrode (4) - with a measuring device (9) for determining the generated by the radiation signal current between first and second electrodes, - with an additional injector electrode (3) on the first major surface and an applied between injector electrode and second electrodes for generating an injection voltage is independent of the dark current radiation (10) of charge carriers of a first type - said first electrode and injector electrode are formed as an interdigital structure forming the semiconductor body Schottky contacts and wherein the Schottky barrier of the injector electrode for the charge carriers of the first type is less than that of the first electrode - wherein the operating voltage is greater than the injection voltage.
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