Plasma etching method and method for manufacturing semiconductor device

The present invention provides a plasma etching method for etching a substrate in an etching device comprising a supply condition regulating unit for adjusting the supply conditions of an etching gas supplied to a substrate to be etched, a temperature regulating unit for regulating the temperature, along the radial direction, of the substrate loaded onto a loading base, and a plasma generating part which generates plasma in a space between the supply condition regulating part and the loading base. The plasma etching method includes a step in which the temperature of the substrate is controlled by the temperature regulating unit so that said temperature is uniform within the substrate plane, and a step in which the concentration distribution in the upper part of the substrate of active species in the plasma generated by the plasma generating part is regulated by the supply condition regulating unit.