Investigation of rapid‐thermal‐oxidized porous silicon

We report that the photoluminescence of porous Si that was quenched by low‐temperature thermal annealing was restored by further annealing in an oxygen atmosphere at high temperature (750 °C≤T≤1100 °C). The intensity of the photoluminescence recovered to near the as‐anodized value and the peak wavelength was red shifted by approximately 100 nm. The oxidized porous Si has been found to have lower resistance and higher photoelectric efficiency than as‐anodized material.