On the Growth and Physical-chemical Characterization of Tb5Si2Ge2 Thin Films Produced by Electron-beam Evaporation

Abstract This pioneering work reports on the production of Tb 5 Si 2 Ge 2 thin films by e-beam evaporation. Scanning Electron Microscopy images unveil the fabrication of dense and homogenous thin films, prepared with a beam current of 25 mA and 31 mA. For the as-deposited thin films, the magnetic susceptibility versus temperature curves reveals that both samples are in the paramagnetic state in all range of temperature (5-370K). Nevertheless, after a 400 °C heat treatment for 2 hours, it was possible to promote a magnetic transition at 112 K, which is characteristic of the magnetic transition of the bulk counterpart. These achievements are a step forward for magnetic refrigeration technology since the obtained transition is the one responsible of the magnetocaloric effect.