Connecting the storage gate memory cell and a manufacturing method and an operation

The present disclosure provides a memory cell connected to the memory gate and its operation and fabrication methods. The storage unit may include an example: a storage transistor including a gate stack formed on a substrate, said gate stack comprising a gate dielectric are sequentially stacked storage, the storage gate electrode, a control gate dielectric and a control gate electrode; and an auxiliary transistor comprising a gate stack formed on the substrate and located on opposite sides of the gate stack of a source / drain region, wherein the source of the auxiliary transistor connected to the memory gate electrode of the memory transistor / one drain region.