Design Trade-offs for Low-power and High Figure-of-merit LNA

We report a 5.4 mW ultra low dc power low noise amplifier (LNA) at 5.5 GHz, which is based on a 0.35-mum BiCMOS technology. The trade-off between the NF and linearity for LNA circuit design has been investigated. Furthermore, the usage of the HBT-cascade-MOS methodology is simultaneously satisfied the tradeoff between noise figure (NF) and linearity of LNA. This amplifier achieves a gain/(NF times P DC ) ratio figure of merit of 0.774 (1/mW) which is the better reported at 5~6-GHz band and suitable for wireless LAN applications