Performances ofGeSnSbTe Material forHigh-Speed Phase Change Memory

range. FortheGSTdevice, theRESETcurrent seemsnotchange alotwith pulse width, while theSETcurrent showsaslightly increasing trend. Onthe Inthis paper, anewapplication ofphasechange material GeSnSbTe other hand, bothRESETandSETcurrents oftheGSSTdevice decrease as (GSST) isproposed forhigh-speed phase-change memory(PCM). Thedevicethepulse width increases. TheGSSTdevice shows ahigher RESETcurrent characteristics ofPCM employing GeSnSbTe andconventional Ge2Sb2Te5 (A1mA)butalower SETcurrent (-5mA)thanthose oftheGSTdevice. (GST)arecompared. Because ofhighcrystallization speed, theGSSTdeviceThehigher RESETcurrent oftheGSSTdevice maybeattributed toits lower demonstrates thebenefits ofshorter SETpulse, lower SETcurrent, andhigherelectrical resistance, while thelowerSETcurrent maybeexplained bythe resistance ratio. lowercrystallization temperature (GSST1500C, GST1600C) andhigher crystallization speed.